npn bc140/10 ? bc140/16 npn bc141/10 ? bc141/16 comset semiconductors 1/3 g g e e n n e e r r a a l l p p u u r r p p o o s s e e t t r r a a n n s s i i s s t t o o r r s s they are silicon planar epitaxial npn trans istors mounted in to-39 metal package. they are particulary designed for audio amplif iers and switching applications up to 1a. pnp complements are the bc160 ? bc161. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage i e = 0 bc140 80 v bc141 100 v ceo collector-emitter voltage i b = 0 bc140 40 v bc141 60 v ebo emitter-base voltage i c = 0 bc140 7 v bc141 i c collector current bc140 1 a bc141 i b base current bc140 0.1 a bc141 p tot @ t case = < 45 3.7 w @ t amb = < 4 5 0.65 t j junction temperature 175 c t st g storage temperature range -55 to +175 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 35 k/ w r thj-amb thermal resistance, junction-ambient 200 k/ w
npn bc140/10 ? bc140/16 npn bc141/10 ? bc141/16 16/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ces collector ? cutoff current i e = 0 v ces = 60 v bc140 - - 100 na bc141 i e = 0, v ces = 60 v t amb = 150c bc140 - - 100 a bc141 v cb0 collector ? base breakdown voltage i c = 100 a i e = 0 bc140 80 - - v bc141 100 - - v ce0 (*) collector ? emitter breakdown voltage i c = 30 ma i b = 0 bc140 40 - - v bc141 60 - - v eb0 emitter ? base breakdown voltage i e = 100 a i c = 0 bc140 7 - - v bc141 v ce(sat) (*) collector-emitter saturation voltage i c = 100 ma , i b = 10 ma - 0.1 v i c = 500 ma , i b = 50 ma - 0.35 i c = 1 a, i b = 100 ma - 0.6 1 v be (*) base-emitter voltage i c = 1 a , v ce = 1v 1.25 1.8 h fe (*) dc current gain i c = 100 a , v ce = 1 v - 75 - - gr 10 - 40 - gr 16 - 90 - i c = 100 ma , v ce = 1 v 40 140 250 gr 10 63 100 160 gr 16 100 160 250 i c = 1 a , v ce = 1 v - 26 - gr 10 - 20 - gr 16 - 30 - f t transition frequency i c = 50 ma , v ce = 10 v 50 - - mh z c cbo collector ? base capacitance i e = 0 ;v cb = 10v f = 1 mh z - 12 25 pf t off turn-off times i c =100 ma i b1 =-i b2 =5 ma - - 850 ns t on turn-on times i c =100 ma i b1 =1 ma - - 250 ns (*) pulsed : pulse duration = 300s, duty cycle = 1%
npn bc140/10 ? bc140/16 npn bc141/10 ? bc141/16 16/10/2012 comset semiconductors 3/3 mechanical data case to-39 revised sepember 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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